US Patent Issued to Tokyo Electron on Sept. 30 for "Cyclic film deposition using reductant gas" (American, Japanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,428,727, issued on Sept. 30, was assigned to Tokyo Electron Ltd. (Tokyo).

"Cyclic film deposition using reductant gas" was invented by Ryota Yonezawa (Albany, N.Y.) and Takamichi Kikuchi (Nirasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for depositing a film on a substrate disposed in a processing chamber includes repeating a cycle. The cycle includes a precursor step and a reactant step, and may include purge steps. A reductant step is performed during at least a portion of the cycle. The precursor step includes exposing the substrate to a precursor gas to form an intermediate film from the precursor gas at the substrate. The pr...