US Patent Issued to Tokyo Electron on Sept. 23 for "Ultra-shallow dopant and ohmic contact regions by solid state diffusion" (California Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,421,604, issued on Sept. 23, was assigned to Tokyo Electron Ltd. (Tokyo).

"Ultra-shallow dopant and ohmic contact regions by solid state diffusion" was invented by Robert D. Clark (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of processing a substrate that includes: loading the substrate in a processing chamber, the substrate including a raised feature of a semiconductor; forming a conformal dopant layer on the raised feature by atomic layer deposition (ALD); forming a metal layer over the raised feature; thermally treating the dopant layer to form an ultra-shallow dopant region in the raised feature by diffusion of a dopant ...