US Patent Issued to Tokyo Electron on Sept. 23 for "Methods for forming semiconductor devices using modified photomask layer" (New York Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,442, issued on Sept. 23, was assigned to Tokyo Electron Ltd. (Tokyo).

"Methods for forming semiconductor devices using modified photomask layer" was invented by Peng Wang (Albany, N.Y.) and Emilia Hirsch (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing semiconductor devices is disclosed. The method includes forming a photomask layer disposed on a dielectric material, wherein the photomask layer comprises a polymer layer. The method includes partially etching the polymer layer to form a first opening. The method includes overlaying partial sidewalls of the first opening with a first silicon layer. The method in...