ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,853, issued on Sept. 2, was assigned to Tokyo Electron Ltd. (Tokyo).
"Etching method and plasma processing apparatus" was invented by Mizuki Matsuo (Miyagi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An etching method and a plasma processing apparatus form a recess with an intended shape. The etching method includes (a) providing a substrate including a silicon-containing film and a mask on the silicon-containing film. The silicon-containing film including a first region and a second region having a boundary therebetween as viewed in cross section in a direction perpendicular to a plane direction of the substrate. The boundary includes a s...