ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,928, issued on Sept. 16, was assigned to Tokyo Electron Ltd. (Tokyo).
"Substrate processing method and substrate processing system" was invented by Takeo Nakano (Nirasaki, Japan), Hirokazu Ueda (Osaka, Japan), Mitsuaki Iwashita (Nirasaki, Japan), Ryuichi Asako (Nirasaki, Japan) and Naoki Umeshita (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method includes: preparing a substrate having a metal film exposed on a surface of the substrate; and forming a film of an ionic self-association material on a surface of the metal film by supplying the ionic self-association material to the surface of the substrate, the ionic sel...