ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,416,075, issued on Sept. 16, was assigned to Tokyo Electron Ltd. (Tokyo).
"Film-forming method and film-forming system" was invented by Masato Araki (Nirasaki, Japan), Tadahiro Ishizaka (Nirasaki, Japan) and Kohichi Satoh (Nirasaki, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A film-forming method of embedding ruthenium in a substrate having a recess includes: (a) providing the substrate in a processing container; (b) supplying a gas containing a ruthenium raw material gas into the processing container to form a ruthenium layer; (c) annealing the ruthenium layer; and (d) supplying a gas containing an ozone gas into the processing container to ...