ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,970, issued on Oct. 7, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing method and plasma processing apparatus" was invented by Chishio Koshimizu (Miyagi, Japan), Shin Hirotsu (Miyagi, Japan), Takenobu Ikeda (Miyagi, Japan), Koichi Nagami (Miyagi, Japan) and Shinji Himori (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method furt...