US Patent Issued to Tokyo Electron on Oct. 28 for "Vertical transistors and methods for forming the same" (New York Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,768, issued on Oct. 28, was assigned to Tokyo Electron Ltd. (Tokyo).

"Vertical transistors and methods for forming the same" was invented by H. Jim Fulford (Albany, N.Y.), Mark I. Gardner (Albany, N.Y.) and Partha Mukhopadhyay (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a transistor structure. The transistor structure may include a metal structure extending along a vertical direction; a gate dielectric layer around the metal structure; a channel layer around the gate dielectric layer; a first metal electrode disposed below the metal structure and in electrical contact with a first end of the channe...