US Patent Issued to Tokyo Electron on Oct. 28 for "Substrate processing method and substrate processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,632, issued on Oct. 28, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and substrate processing apparatus" was invented by Saya Inoue (Koshi, Japan), Satoru Tanaka (Koshi, Japan), Shinichiro Shimomura (Koshi, Japan), Toru Ihara (Koshi, Japan) and Satoshi Biwa (Koshi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method of drying a substrate by using a processing fluid in a supercritical state is performed by a substrate processing apparatus. The substrate processing apparatus includes a fluid discharge unit, a supply line, a fluid drain unit, a drain line and a flow control device. The substra...