US Patent Issued to Tokyo Electron on Oct. 28 for "Substrate processing method and substrate processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,628, issued on Oct. 28, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and substrate processing apparatus" was invented by Kenta Ono (Miyagi, Japan), Shinya Ishikawa (Miyagi, Japan), Tetsuya Nishizuka (Miyagi, Japan) and Masanobu Honda (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "One exemplary embodiment provides a substrate processing method. The method includes: providing a substrate, the substrate including a carbon-containing film, an intermediate film on the carbon-containing film, and a tin-containing film on the intermediate film, the tin-containing film having an opening pattern; first etching, the...