ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,605, issued on Oct. 28, was assigned to Tokyo Electron Ltd. (Tokyo).
"Plasma processing apparatus and plasma processing method" was invented by Takahiro Shindo (Yamanashi, Japan), Seiichi Okamoto (Yamanashi, Japan), Hiroshi Otomo (Yamanashi, Japan), Takamichi Kikuchi (Yamanashi, Japan), Tatsuo Matsudo (Yamanashi, Japan), Yasushi Morita (Yamanashi, Japan) and Takashi Sakuma (Yamanashi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus is provided to perform plasma processing on a substrate. The plasma processing apparatus includes a processing chamber, a substrate support disposed in the processing chamber to place th...