US Patent Issued to Tokyo Electron on Oct. 28 for "In-situ lithography pattern enhancement with localized stress treatment tuning using heat zones" (New York, Texas, Florida Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,455,511, issued on Oct. 28, was assigned to Tokyo Electron Ltd. (Tokyo).

"In-situ lithography pattern enhancement with localized stress treatment tuning using heat zones" was invented by Daniel J. Fulford (Cohoes, N.Y.), Anthony R. Schepis (Averill Park, N.Y.), Mark I. Gardner (Cedar Creek, Texas), H. Jim Fulford (Marianna, Fla.) and Anton J. DeVilliers (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the present disclosure provide a method for optimizing wafer shape. For example, the method can include receiving a wafer having a working surface for one or more devices to be fabricated thereon and a backside surface opposite...