ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,620, issued on Oct. 28, was assigned to Tokyo Electron Ltd. (Tokyo).
"Film-forming method" was invented by Shuji Azumo (Nirasaki, Japan), Masahito Sugiura (Nirasaki, Japan), Takashi Matsumoto (Nirasaki, Japan), Yumiko Kawano (Nirasaki, Japan), Shinichi Ike (Nirasaki, Japan) and Kenji Ouchi (Nirasaki, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a technique capable of controlling a shape of an SAM. Provided is a method of forming a target film on a substrate, wherein the method includes preparing a substrate including a layer of a first conductive material formed on a surface of a first region, and a layer of a...