ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,626, issued on Oct. 28, was assigned to Tokyo Electron Ltd. (Tokyo).
"Etching method and plasma processing apparatus" was invented by Fumiya Takata (Miyagi, Japan), Shota Yoshimura (Miyagi, Japan) and Shinya Morikita (Miyagi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An etching method includes preparing a substrate including a first region containing a first material and a second region containing a second material different from the first material; and etching the second region with a plasma generated from a processing gas containing a tungsten-containing gas. In the etching, a flow rate of the tungsten-containing gas is the largest amon...