US Patent Issued to Tokyo Electron on Oct. 21 for "Substrate processing apparatus and substrate processing method" (Japanese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,336, issued on Oct. 21, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing apparatus and substrate processing method" was invented by Shingo Koiwa (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There are provided an electrostatic chuck that attracts a substrate, and includes a dielectric and an attracting electrode for attracting the substrate inside of the dielectric, a heater electrode for heating the substrate, an attracting power source for applying an attraction voltage for attracting the substrate to the attracting electrode, and a heating power source for applying a heater voltage for heating the substrate to th...