US Patent Issued to Tokyo Electron on Oct. 21 for "Double patterning method of patterning a substrate" (New York Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,354, issued on Oct. 21, was assigned to Tokyo Electron Ltd. (Tokyo).

"Double patterning method of patterning a substrate" was invented by Eric Chih-Fang Liu (Albany, N.Y.), Katie Lutker-Lee (Albany, N.Y.), Steven Grzeskowiak (Albany, N.Y.), Jodi Grzeskowiak (Schenectady, N.Y.), Jeffrey Smith (Albany, N.Y.) and David L. O'Meara (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming, over a hardmask layer and an underlying layer of a substrate, a pattern of first trenches between adjacent template lines, each of the first trenches exposing a portion of the hardmask layer, and each of th...