ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,353, issued on Oct. 21, was assigned to Tokyo Electron Ltd. (Tokyo).

"Double hardmasks for self-aligned multi-patterning processes" was invented by Eric Chih-Fang Liu (Albany, N.Y.), Christopher Cole (Albany, N.Y.), Steven Grzeskowiak (Albany, N.Y.), Katie Lutker-Lee (Albany, N.Y.), Xinghua Sun (Albany, N.Y.) and Daniel Santos Rivera (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of processing a substrate that includes: forming recesses in a first mask layer over a mask stack including a lower hardmask, a middle mask, and an upper hardmask, the recesses defining an initial pattern including a plurality of spacer structures, ea...