US Patent Issued to Tokyo Electron on Oct. 14 for "Methods for forming vertically layered ionic liquid crystal (ILC) structures on a semiconductor substrate" (Japanese, American Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,606, issued on Oct. 14, was assigned to Tokyo Electron Ltd. (Tokyo).

"Methods for forming vertically layered ionic liquid crystal (ILC) structures on a semiconductor substrate" was invented by Dipak Aryal (Austin, Texas), Antonio Luis Pacheco Rotondaro (Austin, Texas), Takeo Nakano (Nirasaki, Japan), Mitsuaki Iwashita (Nirasaki, Japan), Ryuichi Asako (Nirasaki, Japan), Tamotsu Morimoto (Nirasaki, Japan) and Paul Abel (Austin, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of improved methods and processes are provided for patterning a semiconductor substrate using direct self-assembly (DSA) of ionic liquid crystals (ILCs). In the d...