US Patent Issued to Tokyo Electron on Oct. 14 for "Etch selectivity modulation by fluorocarbon treatment" (American, Japanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,614, issued on Oct. 14, was assigned to Tokyo Electron Ltd. (Tokyo).

"Etch selectivity modulation by fluorocarbon treatment" was invented by Ivo Otto IV (Albany, N.Y.), Toshiki Kanaki (Albany, N.Y.), Jonathan Hollin (Nirasaki, Japan) and Subhadeep Kal (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a field effect transistor (FET) over a substrate that includes: growing a doped p-type semiconductor from a silicon nanosheet of the substrate, the substrate including a layer stack of alternating layers of the silicon nanosheet and a sacrificial layer, and a dummy gate formed over the layer stack, the layer stack incl...