US Patent Issued to Tokyo Electron on Nov. 4 for "Three-dimensional plurality of N horizontal memory cells with enhanced high performance circuit density" (Florida, Texas Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,704, issued on Nov. 4, was assigned to Tokyo Electron Ltd. (Tokyo).

"Three-dimensional plurality of N horizontal memory cells with enhanced high performance circuit density" was invented by H. Jim Fulford (Marianna, Fla.), Mark I. Gardner (Cedar Creek, Texas) and Partha Mukhopadhyay (Oviedo, Fla.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the present disclosure provide a semiconductor structure, which can include a lower transistor including a lower channel that is elongated horizontally and includes a lower doped first-type semiconductor layer of a lower doped semiconductor layer, an upper transistor vertically stacked over the lower ...