US Patent Issued to Tokyo Electron on Nov. 4 for "Methods for wet atomic layer etching of molybdenum" (Texas Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,050, issued on Nov. 4, was assigned to Tokyo Electron Ltd. (Tokyo).

"Methods for wet atomic layer etching of molybdenum" was invented by Tulashi Dahal (Austin, Texas), Paul Abel (Austin, Texas) and Mengistie Debasu (Austin, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems and methods are provided for etching molybdenum in a wet ALE process. The methods disclosed herein use a wide variety of techniques and wet etch chemistries to oxidize a molybdenum surface and form a self-limiting, molybdenum oxide passivation layer in a surface modification step of the wet ALE process. For example, the methods use: (a) ultra-violet (UV) photolysis of pe...