US Patent Issued to Tokyo Electron on Nov. 4 for "Methods for forming semiconductor devices using metal hard masks" (New York Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,048, issued on Nov. 4, was assigned to Tokyo Electron Ltd. (Tokyo).

"Methods for forming semiconductor devices using metal hard masks" was invented by Alec Dorfner (Albany, N.Y.) and Minjoon Park (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device is disclosed. The method includes forming a first metal layer on top of an amorphous mask layer disposed over a substrate. The method includes forming a second metal layer that extends along vertical sidewalls of an opening in the amorphous mask layer. The method includes forming a first recess partially extending into the substrate using the first metal ...