US Patent Issued to Tokyo Electron on Nov. 4 for "Method and apparatus for forming ruthenium silicide film on surface of substrate" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,041, issued on Nov. 4, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method and apparatus for forming ruthenium silicide film on surface of substrate" was invented by Kensaku Narushima (Nirasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a ruthenium silicide film on a surface of a substrate includes: forming a ruthenium film to cover a diffusion layer by supplying a gas containing a ruthenium compound to the surface of the substrate where the diffusion layer is exposed; and forming the ruthenium silicide film including Ru2Si3 by siliciding the ruthenium film by supplying a gas containing a silicon compound to the substr...