ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,703, issued on Nov. 4, was assigned to Tokyo Electron Ltd. (Tokyo).
"3D horizontal DRAM with in-situ bridge" was invented by Mark I. Gardner (Cedar Creek, Texas) and H. Jim Fulford (Marianna, Fla.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a stack of dynamic random access memory (DRAM) cell units over a substrate in a vertical direction perpendicular to a working surface of the substrate. Each DRAM cell unit includes a respective transistor, a respective capacitor and a respective bridge structure. Each bridge structure is configured to electrically couple the respective transistor to the respective capacitor. Each...