US Patent Issued to Tokyo Electron on Nov. 25 for "Wet etch process and methods to form air gaps between metal interconnects" (New York Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,702, issued on Nov. 25, was assigned to Tokyo Electron Ltd. (Tokyo).

"Wet etch process and methods to form air gaps between metal interconnects" was invented by Shan Hu (Albany, N.Y.), Eric Chih-Fang Liu (Albany, N.Y.), Henan Zhang (Albany, N.Y.), Sangita Kumari (Albany, N.Y.) and Peter Delia (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of improved process flows and methods are provided in the present disclosure to form air gaps between metal interconnects. More specifically, the present disclosure provides improved process flows and methods that utilize a wet etch process to form recesses between metal interconnects form...