US Patent Issued to Tokyo Electron on Nov. 25 for "Plasma source and plasma processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,637, issued on Nov. 25, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma source and plasma processing apparatus" was invented by Taro Ikeda (Yamanashi, Japan), Yuki Osada (Yamanashi, Japan), Hiroyuki Miyashita (Yamanashi, Japan), Hiroyuki Onoda (Tokyo) and Satoru Kawakami (Yamanashi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a plasma source comprising a first chamber configured to form a flat first plasma generation space, and having a first wall and a second wall, a gas supply configured to supply gas into the first chamber, an electromagnetic wave supply having a dielectric window that is provided in an opening pro...