ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,650, issued on Nov. 25, was assigned to Tokyo Electron Ltd. (Tokyo).
"Film formation method" was invented by Takashi Fuse (Nirasaki, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A film formation method includes: a step of preparing a substrate including a layer of a first material formed on a surface in a first region, and a layer of a second material formed on a surface in a second region; a first SAM formation step of forming a first self-assembled monolayer in the first region by supplying a raw material gas for the first self-assembled monolayer, wherein the raw material gas corresponds to the first material; and a second SAM formation s...