US Patent Issued to Tokyo Electron on Nov. 18 for "Plasma processing method and plasma processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,079, issued on Nov. 18, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing method and plasma processing apparatus" was invented by Hikoichiro Sasaki (Miyagi, Japan), Shirong Guo (Miyagi, Japan), Takenobu Ikeda (Miyagi, Japan) and Yoshimitsu Kon (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing method includes: a) providing a substrate on a substrate support; b) supplying a process gas; c) periodically supplying a pulse voltage to the substrate support; and d) periodically supplying RF power and generating plasma from the process gas to etch a silicon-containing film included in the substrate. The pulse vo...