ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,088, issued on Nov. 18, was assigned to Tokyo Electron Ltd. (Tokyo).
"Plasma processing apparatus and inner chamber" was invented by Koei Ito (Miyagi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus includes a substrate support, an upper electrode, an inner chamber, and an exhaust device in an outer chamber. The substrate support is provided in the outer chamber. The upper electrode is provided above the substrate support. The inner chamber defines a substrate processing space on the substrate support. The exhaust device is connected to an exhaust port provided at a bottom portion of the outer chamber. The inner ch...