ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,701, issued on Nov. 11, was assigned to Tokyo Electron Ltd. (Tokyo).
"Patterning features with metal based resists" was invented by Katie Lutker-Lee (Albany, N.Y.) and Angelique Raley (Albany, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes receiving a substrate in a plasma chamber, the substrate comprising an EUV patterned first mask material comprising a metal-based resist (MBR) and an underlying layer disposed between the substrate and the first mask material; depositing, selectively, a second mask material on the first masking layer using a first plasma comprising a source gas that reacts s...