US Patent Issued to Tokyo Electron on Nov. 11 for "Film forming method" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,694, issued on Nov. 11, was assigned to Tokyo Electron Ltd. (Tokyo).

"Film forming method" was invented by Kiwamu Ito (Yamanashi, Japan), Yamato Tonegawa (Yamanashi, Japan) and Takeshi Oyama (Yamanashi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A film forming method for forming a silicon nitride film on a substrate, includes supplying a silicon-containing gas into a processing chamber accommodating the substrate, and after the supplying the silicon-containing gas, supplying a nitrogen-containing gas into the processing chamber accommodating the substrate. An internal pressure of the processing chamber during the supplying the nitrogen-con...