US Patent Issued to Tokyo Electron on May 6 for "Methods for stabilization of self-assembled monolayers (SAMs) using sequentially pulsed initiated chemical vapor deposition (spiCVD)" (Texas, New York Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,290,835, issued on May 6, was assigned to Tokyo Electron Ltd. (Tokyo).

"Methods for stabilization of self-assembled monolayers (SAMs) using sequentially pulsed initiated chemical vapor deposition (spiCVD)" was invented by Omid Zandi (Austin, Texas), Jacques Faguet (Austin, Texas) and Ornella Sathoud (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides embodiments of processes and methods for stabilizing self-assembled monolayers (SAMs). In the present disclosure, a cyclic vapor deposition process is used to selectively deposit a polymer thin film on a SAM structure formed on a target material. The polymer thin fil...