US Patent Issued to Tokyo Electron on May 27 for "Substrate processing method and substrate processing device" (Japanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,312,683, issued on May 27, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and substrate processing device" was invented by Munehito Kagaya (Nirasaki, Japan), Tadashi Mitsunari (Nirasaki, Japan) and Hiroyuki Onoda (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a substrate processing method and a substrate processing apparatus that perform selective film formation. The substrate processing method includes: forming a silicon-containing film by repeating forming an adsorption layer on a substrate on which a pattern of a concave portion is formed by supplying a silicon-containing gas to the su...