US Patent Issued to Tokyo Electron on May 27 for "Plasma processing method and plasma processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,698, issued on May 27, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing method and plasma processing apparatus" was invented by Cedric Thomas (Miyagi, Japan) and Shihchin Lee (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed in the plasma processing chamber; a source RF generator coupled to the plasma processing chamber, and configured to generate a pulse source RF signal including a plurality of source cycles; and a bias RF generator coupled to the substrate support, and configured to generate a pulse bias RF signal. A transi...