US Patent Issued to Tokyo Electron on May 27 for "3D semiconductor device with 2D semiconductor material and method of forming the same" (New York Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,577, issued on May 27, was assigned to Tokyo Electron Ltd. (Tokyo).

"3D semiconductor device with 2D semiconductor material and method of forming the same" was invented by Mark I. Gardner (Albany, N.Y.) and H. Jim Fulford (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a stack of layers defining a sidewall surface and comprising source and drain layers. A channel structure extends through the stack of layers, is oriented in a vertical direction perpendicular to a main surface of the stack of layers, and is configured to have a current flow path in the vertical direction. The channel structure includes a t...