US Patent Issued to Tokyo Electron on May 20 for "In-situ adsorbate formation for plasma etch process" (Japanese, American Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,212, issued on May 20, was assigned to Tokyo Electron Ltd. (Tokyo).

"In-situ adsorbate formation for plasma etch process" was invented by Du Zhang (Albany, N.Y.), Yu-Hao Tsai (Albany, N.Y.), Masahiko Yokoi (Miyagi, Japan), Yoshihide Kihara (Miyagi, Japan) and Mingmei Wang (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of processing a substrate that includes: flowing dioxygen (O2) and an adsorbate precursor into a plasma processing chamber that is configured to hold the substrate including an organic layer and a patterned etch mask; sustaining an oxygen-rich plasma while flowing the O2 and the adsorbate precursor, oxygen specie...