US Patent Issued to Tokyo Electron on May 13 for "Semiconductor devices with crystallized channel regions and methods of manufacturing thereof" (New York Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,606, issued on May 13, was assigned to Tokyo Electron Ltd. (Tokyo).

"Semiconductor devices with crystallized channel regions and methods of manufacturing thereof" was invented by Mark I. Gardner (Albany, N.Y.) and H. Jim Fulford (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Example implementations can include a semiconductor device with a first seed layer including a first material and having a planar structure, the first material having a two-dimensional structure, a first device layer including a second material and disposed over a first surface of the first seed layer, the second material having a crystallized structure, and a seco...