US Patent Issued to Tokyo Electron on May 13 for "Plasma processing apparatus" (Japanese Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,465, issued on May 13, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing apparatus" was invented by Chishio Koshimizu (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus includes a plasma processing chamber, a substrate support including a bias electrode, an RF power source configured to generate RF power to generate plasma in the plasma processing chamber, an edge ring disposed to surround a substrate on the substrate support, a ring electrode disposed to surround the edge ring, a first bias RF power source and a second bias RF power source. The first bias RF power source is configured to supply...