ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,466, issued on May 13, was assigned to Tokyo Electron Ltd. (Tokyo).
"Plasma enhanced film formation method" was invented by Toshihiko Iwao (Austin, Texas) and Jianping Zhao (Austin, Texas).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of plasma processing that includes: flowing a first gas and a second gas into a plasma processing chamber including a substrate, the second gas including a film precursor; at a first time instance, while maintaining the flow of the first gas, shutting off the flow of the second gas into the plasma processing chamber; and at a second time instance after the first time instance, powering an electrode of the plas...