ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,510, issued on May 13, was assigned to Tokyo Electron Ltd. (Tokyo).
"Method for manufacturing semiconductor device" was invented by Chun-Huai Li (Hsinchu, Taiwan) and Chi-Wen Chen (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes the following steps. A channel layer and a barrier layer are sequentially formed on a substrate by an epitaxial process to form a semiconductor device. The channel layer includes a first III-V compound and the barrier layer includes a second III-V compound. The semiconductor device is disposed within a cavity. A high-pressure fluid is introduced into t...