US Patent Issued to Tokyo Electron on May 13 for "Etching of polycrystalline semiconductors" (American, Japanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,500, issued on May 13, was assigned to Tokyo Electron Ltd. (Tokyo).

"Etching of polycrystalline semiconductors" was invented by Yun Han (Albany, N.Y.), Alok Ranjan (Austin, Texas), Tomoyuki Oishi (Miyagi, Japan), Shuhei Ogawa (Miyagi, Japan), Ken Kobayashi (Miyagi, Japan) and Peter Biolsi (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of processing a substrate that includes: performing a cyclic plasma etch process including a plurality of cycles, each of the plurality of cycles including: etching a patterning layer including a polycrystalline semiconductor material to form or extend a recess by exposing the substrate to a firs...