US Patent Issued to Tokyo Electron on March 4 for "Methods to provide uniform wet etching of material within high aspect ratio features provided on a patterned substrate" (New York Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,749, issued on March 4, was assigned to Tokyo Electron Ltd. (Tokyo).

"Methods to provide uniform wet etching of material within high aspect ratio features provided on a patterned substrate" was invented by Shan Hu (Albany, N.Y.), Henan Zhang (Albany, N.Y.), Sangita Kumari (Albany, N.Y.) and Peter Delia (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of a wet etch process and methods are disclosed herein to provide uniform wet etching of material within high aspect ratio features. In the present disclosure, a wet etch process is used to etch material within high aspect ratio features, such as deep trenches and holes, provided...