ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,053, issued on March 25, was assigned to Tokyo Electron Ltd. (Tokyo).
"Substrate processing with selective etching" was invented by Ivo Otto IV (Albany, N.Y.) and Subhadeep Kal (Albany, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Etching is selectively performed and selectively is modified using a treatment or pre-treatment with nitrogen radicals, prior to etching. Etching is performed with a gas phase chemistry etch. Different selectivities can also be provided in different processes or different regions (or different devices or different locations) of a substrate by the selective use and non-use of the treatment."
The patent was filed on...