ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,209, issued on March 25, was assigned to Tokyo Electron Ltd. (Tokyo).
"Replacement channel 2D material integration" was invented by Robert D. Clark (Albany, N.Y.), H. Jim Fulford (Albany, N.Y.) and Mark I. Gardner (Albany, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for the manufacture of semiconductor devices with integrated two-dimensional (2D) materials are disclosed. Aspects can include forming a base structure comprising a seed material with a chemical element; forming source/drain contacts coupled to first and second portions of the base structure, respectively, wherein the source/drain contacts each have at least the chemical...