US Patent Issued to Tokyo Electron on March 25 for "Plasma processing apparatus and plasma processing method" (Japanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,020, issued on March 25, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing apparatus and plasma processing method" was invented by Takahiro Takeuchi (Miyagi, Japan) and Ken Kobayashi (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus includes: a chamber; first and second matching circuits; a first RF generator that generates a first RF pulsed signal including pulse cycles in which each cycle includes first, second, and third periods, the first RF pulsed signal has first, second, and third power levels in the first, second, and third periods, respectively; a second RF generator that generates a ...