US Patent Issued to Tokyo Electron on March 18 for "Technologies for fabricating a 3D memory structure" (New York, Idaho Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,558, issued on March 18, was assigned to Tokyo Electron Ltd. (Tokyo).

"Technologies for fabricating a 3D memory structure" was invented by Sang Cheol Han (Albany, N.Y.), Sunghil Lee (Albany, N.Y.), Iljung Park (Boise, Idaho) and Soo Doo Chae (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional (3D) memory structure includes a memory array formed on a side of a substrate, a far-back-end-of-line (FBEOL) structure formed on the memory array, and a back-end-of-line (BEOL) structure formed on another side of the substrate opposite the side on which the memory array and the BEOL structure are formed. Methodologies to fabricate...