US Patent Issued to Tokyo Electron on March 18 for "Plasma processing apparatus and plasma processing method" (Japanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,049, issued on March 18, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing apparatus and plasma processing method" was invented by Koichi Nagami (Miyagi, Japan), Kazuya Nagaseki (Miyagi, Japan) and Shinji Himori (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus includes a chamber and a substrate support provided in the chamber. A power supply unit is connected to a lower electrode of the substrate support. The power supply unit applies a first DC voltage to the lower electrode during generation of plasma from an etching gas in the chamber. The first DC voltage is a positive DC voltage. The pow...