US Patent Issued to Tokyo Electron on March 11 for "2D materials with inverted gate electrode for high density 3D stacking" (New York Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,659, issued on March 11, was assigned to Tokyo Electron Ltd. (Tokyo).

"2D materials with inverted gate electrode for high density 3D stacking" was invented by Mark I. Gardner (Albany, N.Y.) and H. Jim Fulford (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a first dielectric layer, a first gate electrode, a first gate dielectric layer, a first source electrode, a first drain electrode, and a first two-dimensional (2D) semiconductor layer. The first dielectric layer may have a first top surface. The first gate electrode may extend from the first top surface into the first dielectric layer. The first ga...