US Patent Issued to Tokyo Electron on June 3 for "Semiconductor devices and methods of manufacturing thereof" (New York Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,206, issued on June 3, was assigned to Tokyo Electron Ltd. (Tokyo).

"Semiconductor devices and methods of manufacturing thereof" was invented by Mark I. Gardner (Albany, N.Y.), H. Jim Fulford (Albany, N.Y.) and Partha Mukhopadhyay (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a fin structure over a substrate, the fin structure including alternating first semiconductor layers and second semiconductor layers stacked along a vertical direction; forming a dummy gate structure over the fin structure; selectively depositing an outer spacer layer on the dummy gate structure; performing a plasma doping process to form...