US Patent Issued to Tokyo Electron on June 24 for "Substrate processing method and substrate processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,020, issued on June 24, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and substrate processing apparatus" was invented by Ryutaro Suda (Miyagi, Japan) and Maju Tomura (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method includes: providing a substrate including a silicon-containing film in a chamber; supplying a processing gas including HF gas into the chamber; etching the silicon-containing film with plasma generated from the processing gas, thereby forming a recess in the silicon-containing film; and controlling a partial pressure of the HF gas to decrease the partial pressure of t...